欢迎访问ic37.com |
会员登录 免费注册
发布采购

C430CB290-S2100 参数 Datasheet PDF下载

C430CB290-S2100图片预览
型号: C430CB290-S2100
PDF下载: 下载PDF文件 查看货源
内容描述: 在20 mA低波长变化461-465纳米 [Low Wavelength Variation 461-465 nm at 20 mA]
分类和应用:
文件页数/大小: 4 页 / 356 K
品牌: CREE [ CREE, INC ]
 浏览型号C430CB290-S2100的Datasheet PDF文件第1页浏览型号C430CB290-S2100的Datasheet PDF文件第3页浏览型号C430CB290-S2100的Datasheet PDF文件第4页  
Maximum Ratings at TA = 25°CNotes ꢀ&3  
DC Forward Current  
C430CB290-S2ꢀ00  
30 mA  
Peak Forward Current (1/10 duty cycle @ 1kHz)  
LED Junction Temperature  
70 mA  
125°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
Storage Temperature Range  
-40°C to +100°C  
-40°C to +100°C  
1000 V  
Note 2  
Electrostatic Discharge Threshold (HBM)  
Note 2  
Electrostatic Discharge Classification (MIL-STD-883E)  
Class 2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA  
Forward  
Voltage  
(Vf, V)  
Reverse  
Current  
[I(Vr=5V), μA]  
Peak  
Wavelength  
(λd, nm)  
Dominant  
Full Width  
Half Max  
(λD, nm)  
Radiant Flux  
(P, mW)  
Part Number  
Wavelength  
(λd, nm)  
Typ.  
4.0  
Max.  
Min.  
Typ.  
Max.  
Typ.  
Min.  
461  
Typ.  
Max.  
465  
Typ.  
C430CB290-S2100  
4.5  
0.85  
1.3  
10  
423  
463  
59  
Mechanical Specifications  
Description  
C430CB290-S2ꢀ00  
Dimension  
240 x 240  
260 x 260  
260 x 260  
250  
Tolerance  
± 35  
P-N Junction Area (μm2)  
Top Area (μm2)  
± 35  
Bottom Area (μm2)  
± 35  
Chip Thickness (μm)  
± 25  
Au Bond Pad Diameter (μm)  
Au Bond Pad Thickness (μm)  
Back Contact Metal Diameter (μm)  
114  
± 20  
1.1  
± 0.5  
± 20  
114  
Notes:  
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000  
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die  
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1  
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing  
temperature must not exceed 325°C (<5 seconds).  
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche  
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification  
of Class 2 is based on sample testing according to MIL-STD-883E.  
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given  
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All  
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an  
integrating sphere using Illuminance A.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
www.cree.com  
2
CPR3DN Rev. -