Typical Performance
110
100
90
80
70
60
50
40
30
20
10
0
500
450
400
350
300
250
200
150
100
50
Conditions:
TJ ≤ 175 °C
Conditions:
TJ ≤ 175 °C
0
-55
-30
-5
20
45
70
95
120
145
170
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
10 µs
Limited by RDS On
100 µs
1 ms
10.00
0.5
0.3
100 ms
100E-3
0.1
1.00
0.10
0.01
0.05
0.02
0.01
10E-3
1E-3
Conditions:
TC = 25 °C
D = 0,
SinglePulse
Parameter: tp
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
12
10
8
10
8
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 5 Ω
VGS = -4V/+15V
FWD = C3M0021120D
L = 65.7 μH
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 5 Ω
VGS = -4V/+15V
ETotal
ETotal
FWD = C3M0021120D
L = 65.7 μH
EOn
6
EOn
6
4
4
EOff
EOff
2
2
0
0
0
0
20
40
60
80
100
10
20
30
40
50
60
70
80
90
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
6
C3M0021120D Rev. -, 08-2019