Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1700
2.0
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.4
1.8
VDS = VGS, IDꢀ=ꢀ100ꢀμA
VGS(th)
Gate Threshold Voltage
Fig. 9
1.4
VDS = VGS, IDꢀ=ꢀ100ꢀμAꢀTJ = 150 °C
VDS = 1700 V, VGS = 0 V
30
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
100
VDS = 1700 V, VGS = 0 V TJ=150 °C
VGS = 20 V, VDS = 0 V
20
1.1
2.9
nA
0.95
2.1
0.9
0.8
VGS = 20 V, ID = 2 A
Fig. 6,
7, 8
RDS(on)
Ω
VGS = 20 V, ID = 2 A, TJ = 150 °C
VDS= 20 V, IDS= 2 A
gfs
Transconductance
S
Fig. 5
VDS= 20 V, IDS= 2 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
td(on)v
trv
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
Turn-On Delay Time
Rise Time
191
12
1.3
6.0
9
VGS = 0 V
pF
Fig. 12
Fig 10
VDS = 1000 V
f = 1 MHz
AC
V
= 25 mV
μJ
VDD = 1000 V, VGS = -5/20 V
ID = 2 A
46
ns
Fig. 7
RG(ext)ꢀ=ꢀ0ꢀΩ,ꢀꢀRLꢀ=ꢀ40ꢀΩ
td(off)v
Turn-Off Delay Time
15
Timing relative to VDS
tfv
Fall Time
9
,
RG
Internal Gate Resistance
24.8
Ω
f = 1 MHz VAC = 25 mV, ESR of CISS
Built-in SiC Body Diode Characteristics
Thermal Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
Thermal Resistance from Junction to Case
1.7
1.8
°C/W
Fig. 15
Gate Charge Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
Note
Qgs
Qgd
Qg
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
2.7
5.4
13
VDS = 1000 V, VGS = -5/20 V
ID = 1 A
Per JEDEC24 pg 27
nC
Fig. 18
2
C2M1000170D Rev. A
CREE [ CREE, INC ]
