Typical Performance
20
-5
-4
VGS = -5 V
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
Condition:
TJ = -55 °C
TJ = 150 °C
tp < 200 µs
-5
15
10
5
VGS = 0 V
-10
-15
-20
-25
-30
-35
TJ = 25 °C
VGS = -2 V
TJ = -55 °C
0
0
2
4
6
8
10
12
14
Gate-SourceVoltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-5
-4
-3
-2
-1
0
-5
-4
-3
-2
-1
0
0
0
Condition:
TJ = 150 °C
Condition:
TJ = 25 °C
p < 200 µs
VGS = 0 V
VGS = -5 V
tp < 200 µs
t
-5
-5
VGS = 0 V
VGS = -2 V
VGS = -5 V
-10
-15
-20
-25
-30
-35
-10
VGS = -2 V
-15
-20
-25
-30
-35
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
CCoonnddititoionnss
VV ==V10 V
IDISD=S =20.5.5mmAA
Conditions:
DSDS
GS
I
I
DS = 10 A
GS = 100 mA
20
15
10
5
VDS = 800 V
TJ = 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C2M0160120D Rev. C, 10-2015
CREE [ CREE, INC ]
