Typical Performance
1.8
1.5
1.2
0.9
0.6
0.3
0.0
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 20 A
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
Conditions:
IDS = 20 A
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5V/+20 V
FWD = C3M0080170P
1.5
ETotal
ETotal
1.2
0.9
0.6
0.3
0.0
(
- - -)FWD = C3D10170H
L = 200 μH
EOn
EOn
ETotal
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 20 A
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
80
60
40
20
0
td(off)
td(on)
tf
tr
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
C2M0080170P Rev. A, 05-2018
7
CREE [ CREE, INC ]
