Typical Performance
60
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
50
VGS = 0 V
TJ = 150 °C
-20
-40
-60
-80
-100
40
30
20
10
0
VGS = -2 V
TJ = 25 °C
TJ = -55 °C
0
2
4
6
8
10
12
14
Gate-SourceVoltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
Condition:
TJ = 150 °C
tp < 200 µs
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
VGS = -5 V
VGS = 0 V
VGS = 0 V
VGS = -2 V
-20
-40
-60
-80
-100
-20
-40
-60
-80
VGS = -2 V
-100
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Conditions
DS = 1V0 V
IDS = 01.05mmAA
Conditions:
V
GS
I
I
DS = 40 A
GS = 100 mA
20
15
10
5
VDS = 800 V
TJ = 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C2M0040120D Rev. B, 10-2015
CREE [ CREE, INC ]
