IXD_614
1.6 Electrical Characteristics: T = - 40°C to +125°C
A
Test Conditions: 4.5V < V < 35V.
CC
Parameter
Input Voltage, High
Conditions
Symbol
VIH
Minimum
Maximum
Units
4.5V < V < 18V
CC
3.3
-
-
0.65
10
V
4.5V < V < 18V
CC
Input Voltage, Low
VIL
0V < V < V
IN
Input Current
IIN
CC
-
A
Output Voltage, High
Output Voltage, Low
-
VOH
VOL
ROH
ROL
VCC-0.025
-
V
-
-
-
-
0.025
1.5
1.2
V
=18V, I =-100mA
OUT
Output Resistance, High State
Output Resistance, Low State
CC
V
=18V, I =100mA
OUT
CC
Limited by package power
dissipation
Output Current, Continuous
IDC
-
1
A
C
C
C
C
=15nF, V =18V
CC
Rise Time
tR
tF
LOAD
LOAD
LOAD
LOAD
-
-
-
-
-
-
-
-
-
50
40
90
90
75
85
3
=15nF, V =18V
CC
Fall Time
=15nF, V =18V
CC
On-Time Propagation Delay
Off-Time Propagation Delay
Enable to Output-High Delay Time
Disable to High Impedance State Delay Time
tONDELAY
tOFFDELAY
tENOH
tDOLD
ns
=15nF, V =18V
CC
IXDD614 only
IXDD614 only
=18V, V =3.5V
V
mA
CC
IN
V
=18V, V =0V
IN
Power Supply Current
ICC
150
150
CC
A
V
=18V, V =V
IN CC
CC
1.7 Thermal Characteristics
Package
Parameter
Symbol
Rating
Units
CI (5-Pin TO-220)
PI (8-Pin DIP)
36
125
85
46
3
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
°C/W
JA
SI (8-Pin Power SOIC)
YI (5-Pin TO-263)
CI (5-Pin TO-220)
SI (8-Pin Power SOIC)
YI (5-Pin TO-263)
10
2
°C/W
JC
R02
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