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IX2127G 参数 Datasheet PDF下载

IX2127G图片预览
型号: IX2127G
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压功率MOSFET和IGBT驱动器 [High-Voltage Power MOSFET & IGBT Driver]
分类和应用: 晶体驱动器晶体管开关双极性晶体管
文件页数/大小: 12 页 / 1636 K
品牌: CLARE [ CLARE ]
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IX2127  
1.4 Recommended Operating Conditions  
Parameter  
Logic Supply  
Symbol  
Minimum  
Maximum  
Units  
V
9
12  
CC  
V
High Side Floating Supply  
High Side Offset Voltage  
Logic Input Voltage  
VS+9  
VS+12  
B
V
-5  
600  
VCC  
S
V
V
IN  
0
V
High Side Floating Output  
Current Sense Signal Voltage  
FAULT Output Voltage  
VS  
VB  
HO  
V
VS  
VS+5  
VCC  
CS  
V
FLT  
0
T
Ambient Temperature  
-40  
+125  
°C  
A
1.5 General Conditions  
Typical values are characteristic of the device at 25°C  
and are the result of engineering evaluations. They are  
provided for information purposes only and are not  
part of the manufacturing testing requirements.  
Unless otherwise noted, all electrical specifications  
are listed for T =25°C.  
A
1.6 Electrical Characteristics  
Unless otherwise specified, the test conditions are: V =V =12V; V , IN, FAULT, and Leakage voltages and  
CC  
BS  
CC  
currents are referenced to COM; V , HO, and CS voltages and currents are referenced to V .  
B
S
1.6.1 Power Supply Specifications  
Parameter  
Conditions  
Symbol  
IQCC  
Minimum  
Typical Maximum Units  
Quiescent V Supply Current  
CC  
V =0V  
IN  
-
-
280  
500  
7.7  
7.2  
-
400  
1000  
8.6  
8.1  
2
A  
Quiescent V Supply Current  
BS  
V =0V  
IN  
IQBS  
V
V
UVLO Positive-Going Threshold  
UVLO Negative-Going Threshold  
-
VBS_UV+  
VBS_UV-  
ILKG  
BS  
BS  
6.8  
6.3  
-
V
-
V =V =600V  
S
Offset Supply Leakage Current  
A  
B
1.6.2 Gate Drive and Shutdown Specifications  
Parameter  
Conditions  
Symbol  
VOH  
Minimum  
Typical Maximum Units  
High Level Output Voltage, V -V  
B
I
=0A  
HO  
HO  
HO  
-
-
-
-
100  
100  
mV  
Low Level Output Voltage, V  
I
=0A  
VOL  
HO  
Output Short Circuit Pulsed Current  
V
=0V, V =5V, PW<10s,  
HO  
IN  
I
-200  
420  
-250  
500  
-
-
HO+  
R
=20* (see Figure 1)  
GATE  
mA  
V
=12V, V =0V, PW<10s,  
HO  
IN  
I
HO-  
R
=20* (see Figure 1)  
GATE  
V
=9V to 12V  
CS Input, Positive-Going Threshold  
“High” CS Bias Current  
VCS_TH+  
ICS+  
CC  
180  
260  
320  
1
mV  
V
=3V  
=0V  
CS  
CS  
-
-
-
-
A  
V
ICS-  
-1  
* R  
4
value must be 20or greater.  
GATE  
www.clare.com  
R02