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CPC5602_12 参数 Datasheet PDF下载

CPC5602_12图片预览
型号: CPC5602_12
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型场效应管 [N-Channel Depletion Mode FET]
分类和应用:
文件页数/大小: 5 页 / 105 K
品牌: CLARE [ CLARE ]
 浏览型号CPC5602_12的Datasheet PDF文件第1页浏览型号CPC5602_12的Datasheet PDF文件第2页浏览型号CPC5602_12的Datasheet PDF文件第4页浏览型号CPC5602_12的Datasheet PDF文件第5页  
CPC5602  
PERFORMANCE DATA*  
Output Characteristics  
(TA=25ºC)  
On-Resistance vs. Drain Current  
Transconductance vs Drain Current  
(VGS=0V)  
(VDS=10V)  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
300  
250  
200  
150  
100  
50  
20  
TA=-40ºC  
TA=25ºC  
TA=125ºC  
VGS=-0.5  
VGS=-1  
VGS=-1.5  
15  
10  
5
VGS=-2  
0
0
0
1
2
3
4
5
0
50  
100  
150  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
VDS (V)  
ID (mA)  
ID (A)  
VGS(off) vs.Temperature  
(VDS=10V, ID=2μA)  
On-Resistance vs.Temperature  
(VGS=0V, ID=100mA)  
Transfer Characteristics  
(VDS=10V)  
250  
200  
150  
100  
50  
-2.3  
-2.4  
-2.5  
-2.6  
-2.7  
-2.8  
-2.9  
-3.0  
12  
11  
10  
9
TA=125ºC  
TA=25ºC  
TA=-40ºC  
8
7
6
5
0
4
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
VGS (V)  
Temperature (ºC)  
Temperature (ºC)  
Capacitance vs. Drain-Source Voltage  
(VGS=-5V)  
Power Dissipation  
vs. Ambient Temperature  
Forward Safe Operating Bias  
(VGS=0V, DC Load,TC=25ºC)  
300  
250  
200  
150  
100  
50  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1
0.1  
Limited by  
Device Channel  
Saturation  
CISS  
COSS  
CRSS  
Limited by  
Device RDS(on)  
0.01  
0.001  
0
80  
0
5
10  
15  
20  
25  
30  
0
20  
40  
60  
100 120 140 160  
1
10  
100  
1000  
VDS (V)  
Temperature (ºC)  
VDS (V)  
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please  
contact our application department.  
R07  
www.clare.com  
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