CPC5603
N-Channel Depletion Mode FET
Parameter
Drain-to-Source Voltage - V
DS
Max On-Resistance - R
DS(on)
Max Power
Rating
415
14
2.5
Units
V
W
Description
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device particularly in difficult application
environments such as telecommunications, security,
and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Features
•
415V Drain-to-Source Voltage
•
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
•
Low On-Resistance: 8 (Typical) @ 25°C
•
Low V
GS(off)
Voltage: -2.0V to -3.6V
•
High Input Impedance
•
Low Input and Output Leakage
•
Small Package Size SOT-223
•
PC Card (PCMCIA) Compatible
•
PCB Space and Cost Savings
Applications
•
Support Component for LITELINK™
Data Access Arrangement (DAA)
•
Telecom
•
Normally-On Switches
•
Ignition Modules
•
Converters
•
Security
•
Power Supplies
Ordering Information
Part Number
CPC5603C
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/reel)
CPC5603CTR
Package Pinout
D
4
2 3
D
S
1
G
Pin Number
Name
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
Pb
RoHS
2002/95/EC
e
3
www.clare.com
1
DS-CPC5603-R05
CLARE [ CLARE, INC. ]
