CPC3701
60V, Depletion-Mode, N-Channel
Vertical DMOS FET
V
(BR)DSX
/
V
(BR)DGX
60V
R
DS(on)
(max)
1
I
DSS
(min)
600mA
Package
SOT-89
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3701
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Features
•
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
•
Low On-Resistance: 1 max. at 25ºC
•
High Input Impedance
•
Low V
GS(off)
Voltage: -0.8 to -2.9V
•
Small Package Size SOT-89
Applications
•
•
•
•
•
•
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Security
Power Supplies
Ordering Information
Part #
CPC3701C
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout (SOT-89)
CPC3701CTR
D
G
D
S
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
e
3
www.clare.com
1
DS-CPC3701-R02
CLARE [ CLARE, INC. ]
