CPC3710
N-Channel Depletion-Mode FET
PRELIMINARY
V
(BR)DSX
/
V
(BR)DGX
250V
P
R
DS(on)
(max)
10
I
DSS
(min)
220mA
Package
SOT-89
Description
The CPC3710 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3710
is a highly reliable FET device that has been used
extensively in Clare’s solid state relays for industrial
and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3710 offers a low, 10 maximum, on-state
resistance at 25ºC.
The CPC3710 has a minimum breakdown voltage
of 250V
P
, and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Features
•
•
•
•
•
•
Low R
DS(on)
at Cold Temperatures
Low On-Resistance: 10 max. at 25ºC
High Input Impedance
High Breakdown Voltage: 250V
P
Low V
GS(off)
Voltage: -1.6 to -3.9V
Small Package Size SOT-89
Applications
•
•
•
•
•
•
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Ordering Information
Part #
CPC3710C
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
CPC3710CTR
Package Pinout
D
G
D
S
G
Circuit Symbol
D
(SOT-89)
S
Pb
RoHS
2002/95/EC
e
3
PRELIMINARY
1
DS-CPC3710-R00D
CLARE [ CLARE, INC. ]
