N-Channel Depletion-Mode
Vertical DMOS FETs
BV
DSX
/
BV
DGX
350V
R
DS(ON)
(max)
30Ω
I
DSS
(min)
140mA
Package
SOT-89
CPC3730C
Description
•
Depletion mode device offers low R
DS(ON)
at cold
temperatures
•
Low on resistance 30 ohms max. at 25ºC
•
High input impedance
•
High breakdown voltage 350V
•
Low V
GS(off)
voltage -1.6 to -3.9V
•
Small package size SOT-89
Features
The CPC3730C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3730C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730C offers a low 30 ohm maximum
on-state resistance at 25ºC.
•
•
•
•
•
•
Applications
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
The CPC3730C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Package Pinout
D
G
D
S
Part #
CPC3730C
CPC3730CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
(SOT-89)
Switching Waveform
0V
INPUT
INPUT
Test Circuit
90%
90%
PULSE
PULSE
GENERATOR
GENERATOR
V
DD
V
DD
0V
R
L
R
L
OUTPUT
OUTPUT
-10V
10%
-10V
10%
t
(ON)
t
d(ON)
t
(ON)
t
r
t
d(ON)
10%
90%
t
r
t
(OFF)
t
d(OFF)
t
(OFF)
t
F
t
d(OFF)
10%
90%
t
F
10%
90%
R
gen
R
gen
D.U.T.
INPUT
INPUT
D.U.T.
V
DD
OUTPUT
OUTPUT
V
DD
10%
90%
0V
0V
DS-CPC3730C-R00B.2
www.clare.com
1
CLARE [ CLARE, INC. ]
