N-Channel Depletion-Mode
Vertical DMOS FETs
BV
DSX
/
BV
DGX
350V
R
DS(ON)
(max)
14Ω
I
DSS
(min)
240mA
Package
SOT-89
CPC3714C
Description
The CPC3714C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3714C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714C offers a low 14 ohm maximum on-
state resistance at 25ºC.
Features
•
Depletion mode device offers low R
DS(ON)
at cold
temperatures
•
Low on resistance 14 ohms max. at 25ºC
•
High input impedance
•
High breakdown voltage 350V
•
Low V
GS(off)
voltage -1.6 to -3.9V
•
Small package size SOT-89
IM
EL
D
90%
10%
90%
IN
PULSE
GENERATOR
•
•
•
•
•
•
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
The CPC3714C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3714C
CPC3714CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Package Pinout
G
D
S
Switching Waveform
0V
INPUT
INPUT
PR
(SOT-89)
Test Circuit
PULSE
GENERATOR
A
R
gen
R
gen
INPUT
INPUT
Applications
RY
V
DD
V
DD
0V
R
L
OUTPUT
R
L
OUTPUT
-10V
10%
-10V
t
(ON)
t
d(ON)
t
(ON)
t
r
t
(OFF)
t
F
t
(OFF)
t
d(OFF)
10%
90%
t
F
10%
90%
t
d(ON)
t
d(OFF)
t
r
10%
90%
D.U.T.
D.U.T.
V
DD
OUTPUT
OUTPUT
V
DD
10%
0V
90%
0V
DS-CPC3714C-R00A.5
www.clare.com
1