N-Channel Depletion-Mode
Vertical DMOS FETs
BV
DSX
/
BV
DGX
250V
R
DS(ON)
(max)
10Ω
I
DSS
(min)
220mA
Package
SOT-89
CPC3710C
Description
IM
EL
D
IN
90%
10%
90%
PULSE
GENERATOR
•
•
•
•
•
•
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
The CPC3710C has a minimum breakdown voltage of
250V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3710C
CPC3710CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Package Pinout
G
D
S
Switching Waveform
0V
INPUT
INPUT
PR
(SOT-89)
Test Circuit
PULSE
GENERATOR
A
R
gen
R
gen
INPUT
INPUT
Applications
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3710C offers a low 10 ohm maximum on-
state resistance at 25ºC.
RY
V
DD
•
Depletion mode device offers low R
DS(ON)
at cold
temperatures
•
Low on resistance 10 ohms max. at 25ºC
•
High input impedance
•
High breakdown voltage 250V
•
Low V
GS(off)
voltage -1.6 to -3.9V
•
Small package size SOT-89
Features
The CPC3710C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3710C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
V
DD
0V
R
L
OUTPUT
R
L
OUTPUT
-10V
10%
-10V
t
(ON)
t
d(ON)
t
r
t
(ON)
t
(OFF)
t
d(ON)
t
d(OFF)
10%
t
r
t
F
10%
t
(OFF)
t
d(OFF)
t
F
10%
90%
D.U.T.
D.U.T.
V
DD
OUTPUT
V
DD
10%
OUTPUT
0V
0V
90%
90% 90%
DS-CPC3710C-R00A.8
www.clare.com
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