Electrical Characteristics: VCC = 15V, RT = 8.2kΩ, CT = 3.3nF, 0°C ≤ TA ≤ 70°C [Note 2], unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ꢀ Current Sense Section
Current Sense Input
Voltage Gain
(Notes 3 and 4)
2.75
0.9
3.00
1.0
3.25
1.1
V/V
V
Maximum Current Sense
Input Threshold
(Note 3)
Input Bias Current
Propagation Delay
-2.0
150
-30.0
300
µA
ns
Current Sense Input to Output (Note 5)
ꢀ Output 2 Enable Pin
Enable Pin Voltage
High State
Low State
V
V
V
ENABLE2 enabled
ENABLE2 disabled
3.5
0.0
VREF
1.5
Low State Input Current
VIL = 0V
100
250
400
µA
ꢀ Drive Outputs
Output Voltage
Low State
ISINK = 20mA
0.1
1.6
13.5
13.4
0.4
2.5
V
V
V
V
ISINK = 200mA
ISOURCE = 20mA
ISOURCE = 200mA
High State
13.0
12.0
Output Voltage with
UVLO Activated
VCC = 6.0V, ISINK = 1.0mA
0.1
1.1
V
Output Voltage Rise Time
Output Voltage Fall Time
CL = 1.0nF (Note 5)
CL = 1.0nF (Note 5)
28
25
150
150
ns
ns
ꢀ Undervoltage Lockout Section
Start-Up Threshold
Minimum Operating Voltage
Hysteresis
13
9.0
14
10.0
4.0
15
11.0
V
V
V
ꢀ Total Device
Start-Up Current
Operating Current
VCC = 12V
(Note 2)
0.6
20
1.0
25
mA
mA
Note 1: Maximum package power dissipation limits must be
observed.
Note 4: Comparator gain is defined as:
∆V Compensation
∆V Current Sense
AV=
Note 2: Low duty cycle pulse techniques are used during test to
maintain junction temperature as close to ambient as
possible.
Note 5: These parameters are guaranteed by design but not
100% tested in production.
Note 3: This parameter is measured at latch trip point with
VFB = 0V.
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
