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CS5231-3 参数 Datasheet PDF下载

CS5231-3图片预览
型号: CS5231-3
PDF下载: 下载PDF文件 查看货源
内容描述: 500毫安, 3.3V线性稳压器,带有辅助控制 [500mA, 3.3V Linear Regulator with Auxiliary Control]
分类和应用: 稳压器
文件页数/大小: 11 页 / 283 K
品牌: CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
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Application Information: continued  
VOUT = (ILOAD) (ESR)  
If required, using a few capacitors in parallel to increase  
the bulk charge storage and reduce the ESR should give  
better performance than using a single input capacitor.  
Short, straight connections between the power supply and  
VIN lead along with careful layout of the PC board ground  
plane will reduce parasitic inductance effects. Wide VIN  
and VOUT traces will reduce resistive voltage drops.  
This limitation directly affects load regulation. Capacitor  
ESR must be minimized if output voltage must be main-  
tained within tight tolerances. In such a case, it is often  
advisable to use a parallel network of different types of  
capacitors. For example, electrolytic capacitors provide  
high charge storage capacity in a small size, while tantalum  
capacitors have low ESR. The parallel combination will  
result in a high capacity, low ESR network. It is also impor-  
tant to physically locate the capacitance network close to  
the load, and to connect the network to the load with wide  
PC board traces to minimize the metal resistance.  
The CS5231-3 has been carefully designed to be stable for  
output capacitances greater than 10µF with equivalent  
series resistance less than 1. While careful board layout is  
important, the user should have a stable system if these  
constraints are met. A graph showing the region of stability  
for the CS5231-3 is included in the “Typical Performance  
Characteristics” section of this data sheet.  
Choosing the PFET Switch  
The choice of the external PFET switch is based on two  
main considerations. First, the PFET should have a very  
low turn-on threshold. Choosing a switch transistor with  
VGS(ON) 1V ensures the PFET will be fully enhanced with  
only 3.3V of gate drive voltage. Second, the switch transis-  
tor should be chosen to have a low RDS(ON) to minimize the  
voltage drop due to current flow in the switch. The formu-  
la for calculating the maximum allowable on-resistance is  
VAUX(MIN) VOUT(MIN)  
RDS(ON)(MAX)  
=
1.5 × IOUT(MAX)  
Input Capacitors and the VIN Thresholds  
where VAUX(MIN) is the minimum value of the auxiliary  
supply voltage, VOUT(MIN) is the minimum allowable out-  
put voltage, IOUT(MAX) is the maximum output current and  
1.5 is a “fudge factor” to account for increases in RDS(ON)  
due to temperature.  
A capacitor placed on the VIN pin will help to improve  
transient response. During a load transient, the input  
capacitor serves as a charge “reservoir”, providing the  
needed extra current until the external power supply can  
respond. One of the consequences of providing this current  
is an instantaneous voltage drop at VIN due to capacitor  
ESR. The magnitude of the voltage change is again the  
product of the current change and the capacitor ESR.  
Output Voltage Sensing  
It is not possible to remotely sense the output voltage of  
the CS5231-3 since the feedback path to the error amplifier  
is not externally available. It is important to minimize volt-  
age drops due to metal resistance of high current PC board  
traces. Such voltage drops can occur in both the supply  
traces and the return traces.  
It is very important to consider the maximum current step  
that can exist in the system. If the change in current is large  
enough, it is possible that the instantaneous voltage drop  
on VIN will exceed the VIN threshold hysteresis, and the IC  
will enter a mode of operation resembling an oscillation.  
As the part turns on, the output current IOUT will increase,  
reaching current limit during initial charging. Increasing  
IOUT results in a drop at VIN such that the shutdown  
threshold is reached. The part will turn off, and the load  
current will decrease. As IOUT decreases, VIN will rise and  
the part will turn on, starting the cycle all over again. This  
oscillatory operation is most likely at initial startup when  
the output capacitance is not charged, and in cases where  
the ramp-up of the VIN supply is slow. It may also occur  
during the power transition when the linear regulator  
turns on and the PFET turns off. a 15µs delay exists  
between turn-on of the regulator and the AUXDRV pin  
pulling the gate of the PFET high. This delay prevents  
“chatter” during the power transitions. During this inter-  
val, the linear regulator will attempt to regulate the output  
voltage as 3.3V. If the output voltage is significantly below  
3.3V, the IC will go into current limit while trying to raise  
VOUT. It is a short-lived phenomenon and is mentioned  
here to alert the user that the condition can exist. It is typi-  
cally not a problem in applications. Careful choice of the  
PFET switch with respect to RDS(ON) will minimize the volt-  
age drop which the output must charge through to return  
to a regulated state. More information is provided in the  
section on choosing the PFET switch.  
The following board layout practices will help to minimize  
output voltage errors:  
• Always place the linear regulator as close to both load  
and output capacitors as possible.  
• Always use the widest possible traces to connect the lin-  
ear regulator to the capacitor network and to the load.  
• Connect the load to ground through the widest possible  
traces.  
• Connect the IC ground to the load ground trace at the  
point where it connects to the load.  
Current Limit  
The CS5231-3 has internal current limit protection. Output  
current is limited to a typical value of 850mA, even under  
output short circuit conditions. If the load current drain  
exceeds the current limit value, the output voltage will be  
pulled down and will result in an out of regulation condi-  
tion. The IC does not contain circuitry to report this fault.  
Thermal Shutdown  
The CS5231-3 has internal temperature monitoring circuit-  
ry. The output is disabled if junction temperature of the IC  
reaches a typical value of 180°C. Thermal hysteresis is typi-  
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