Electrical Characteristics: 0¡C < TA < +70¡C; 0¡C < TJ < +85¡C; 8V < VCC1 < 14V; 5V < VCC2 < 20V;
DAC Code: VID4 = VID2 = VID1 = VID0 = 1; VID3 = 0; CVGATE(L) and CVGATE(H) = 1nF; COFF = 330pF; CSS = 0.1µF, unless otherwise specified.
PARAMETER
■ DAC: continued
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VID4 VID3 VID2 VID1 VID0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1.5246
1.5741
1.6236
1.6731
1.7226
1.7721
1.8216
1.8711
1.9206
1.9701
2.0196
2.0691
1.2315
2.1186
2.2176
2.3166
2.4156
2.5146
2.6136
2.7126
2.8116
2.9106
3.0096
3.1086
3.2076
3.3066
3.4056
3.5046
1.5400
1.5900
1.6400
1.6900
1.7400
1.7900
1.8400
1.8900
1.9400
1.9900
2.0400
2.0900
1.2440
2.1400
2.2400
2.3400
2.4400
2.5400
2.6400
2.7400
2.8400
2.9400
3.0400
3.1400
3.2400
3.3400
3.4400
3.5400
1.5554
1.6059
1.6564
1.7069
1.7574
1.8079
1.8584
1.9089
1.9594
2.0099
2.0604
2.1109
1.2564
2.1614
2.2624
2.3634
2.4644
2.5654
2.6664
2.7674
2.8684
2.9694
3.0704
3.1714
3.2724
3.3734
3.4744
3.5754
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
■ VGATE(H) and VGATE(L)
Out SOURCE Sat at 100mA
Out SINK Sat at 100mA
Measure VCC1 Ð VGATE(L),;VCC2 Ð VGATE(H)
Measure VGATE(H) Ð VPGnd;
VGATE(L) Ð VPGnd
1.2
1.0
2.0
1.5
V
V
Out Rise Time
Out Fall Time
1V < VGATE(H) < 9V; 1V < VGATE(L) < 9V
VCC1 = VCC2 = 12V
30
30
50
50
ns
ns
9V > VGATE(H) > 1V; 9V > VGATE(L) > 1V
VCC1 = VCC2 = 12V
Shoot-Through Current
Note 1
50
50
mA
ns
Delay VGATE(H) to VGATE(L)
VGATE(H) falling to 2V; VCC1 = VCC2 = 8V
VGATE(L) rising to 2V
25
25
Delay VGATE(L) to VGATE(H)
VGATE(L) falling to 2V; VCC1 = VCC2 = 8V
VGATE(H) rising to 2V
50
ns
VGATE(H), VGATE(L) Resistance
VGATE(H), VGATE(L) Schottky
Resistor to LGnd
20
50
100
800
k½
LGnd to VGATE(H) @ 10mA
LGnd to VGATE(L) @ 10mA
600
mV
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
