Electrical Characteristics: -40°C < TA < 85°C, -40°C < TJ < 150°C, 3V < VC < 20V, 8.2V < VCC < 20V,
RT = 12kΩ, CT = 390pF, unless otherwise stated
PARAMETER
ꢀ Error Amplifier continued
COMP High Voltage
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
FB = 2.3V
FB = 2.7V
4.35
0.4
4.8
0.8
5
V
V
COMP Low Voltage
V
1.2
PS Ripple Rejection
SS Clamp, VCOMP
FREQ = 120Hz (Note 1)
60
85
dB
V
VSS=2.5V, VFB = 0V, ISET = 2V
2.4
2.5
2.6
I
LIM(SET) Clamp
(Note 1)
0.95
230
1
1.15
V
ꢀ Oscillator
Accuracy
RT = 12k, CT = 390pF
255
2
280
3
kHz
%
Voltage Stability
Temperature Stability
Delta Frequency 8.2V < VCC < 20V
T
MIN < TA < TMAX (Note1)
8
%
Min Charge & Discharge Time
Duty Cycle Accuracy
(Note1)
0.333
70
µs
%
RT = 12k, CT = 390pF
77
83
Peak Voltage
(Note 1)
3
V
V
V
Valley Voltage
(Note 1)
1.5
1.4
Valley Clamp Voltage
10k Resistor to ground on RTCT
1.2
1.6
Discharge Current
Discharge Current
0.8
1
1
1.2
mA
mA
TA=25°C (Note 1)
0.925
1.075
ꢀ Synchronization (CS51021/23)
Input Threshold
1.0
160
3.5
1.5
260
4.3
2.7
360
4.8
V
ns
V
Output Pulsewidth
Output High Voltage
I
SYNC = 100µA
Input Resistance
Drive Delay
(Note 1)
35
80
70
120
2
140
150
3.5
kΩ
ns
SYNC to GATE RESET
1k Load
Output Drive Current
1.25
mA
ꢀ SLEEP (CS51022/24)
SLEEP Input Threshold
SLEEP Input Current
Active High
1.0
11
1.5
25
2.7
46
V
VSLEEP = 4V
µA
ICC @ SLEEP
VCC ≤ 15V
50
100
µA
ꢀ GATE Driver
HIGH Voltage
Measure VC-GATE, VC = 10V, 150mA Load
1.5
2.2
V
LOW Voltage
Measure GATE-PGnd, 150mA SINK
VC = 20V, 1nF
1.2
1.5
16
V
V
HIGH Voltage Clamp
11
13.5
LOW Voltage Clamp
Peak Current
Measured at 10mA Output Current
VC = 20V, 1nF (Note 1)
0.6
1
0.8
V
A
UVL Leakage
RISE Time
VC = 20V, measured at 0V
-1
-50
µA
ns
Load = 1nF, 1V < GATE < 9V,
60
100
VC = 20V, TA = 25˚C
FALL Time
Load = 1nF, 9V > GATE > 1V, VC = 20V
15
40
ns
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
