CED6336/CEU6336
25
20
15
10
50
40
30
20
VGS=10,8,6,5V
VGS=4.0
V
25 C
5
0
10
TJ=125 C
-55 C
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.0
2.0
3.0
5.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
1000
800
600
400
200
0
2.0
1.7
1.4
1.1
0.8
0.5
0.2
ID=25A
VGS=10V
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
