CED61A2/CEU61A2
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 18A
VGS = 2.5V, ID = 9A
VDS = 10V, ID = 18A
0.5
1.2
14
24
V
mΩ
mΩ
S
12
17
35
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1390
555
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
175
td(on)
tr
td(off)
tf
18
14
40
30
ns
ns
VDD = 10V, ID = 18A,
VGS = 5V, RGEN = 3.3Ω
Turn-On Rise Time
Turn-Off Delay Time
60
110
35
ns
Turn-On Fall Time
16
ns
Total Gate Charge
Qg
19.5
2
26
nC
nC
nC
VDS = 20V, ID = 18A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
8.7
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
45
A
V
VSD
VGS = 0V, IS = 45A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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CET [ CHINO-EXCEL TECHNOLOGY ]
