CED540L/CEU540L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
25
100
-100
µA
nA
nA
IGSSF
IGSSR
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 18A
VGS = 5V, ID = 15A
VDS = 25V, ID = 18A
1
3
V
Static Drain-Source
mΩ
mΩ
S
40
43
50
53
RDS(on)
gFS
On-Resistance
Forward Transconductance
14
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1295
199
40
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
13
3.1
55
5
26
7
ns
ns
VDD = 50V, ID = 18A,
VGS = 10V, RGEN = 5.1Ω
Turn-Off Delay Time
Turn-Off Fall Time
110
10
80
ns
ns
Total Gate Charge
Qg
40
3.7
10
nC
nC
nC
VDS = 80V, ID = 18A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Notes :
IS
25
A
V
VSD
VGS = 0V, IS = 18A
1.3
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I = 15A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
