CED40N10/CEU40N10
36
30
24
18
12
6
100
VGS=10,9V
80
V
GS=6V
60
V
GS=5V
40
25 C
20
-55 C
TJ=125 C
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.6
2.2
1.8
1.4
1.0
0.6
0.2
6000
5000
4000
3000
2000
1000
0
ID=20A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
