CED2182/CEU2182
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
10
µA
µA
µA
IGSSF
IGSSR
-10
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 15A
VGS = 2.5V, ID = 10A
VDS = 5 V, ID = 18A
0.6
1.2
18
25
V
mΩ
mΩ
S
15
20
36
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
950
470
150
pF
pF
pF
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
13
12
60
30
15
2.5
3.5
40
40
ns
ns
VDD = 10V , ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
130
40
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
20
nC
nC
nC
VDS = 10V, ID = 6A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
18
A
V
VSD
VGS = 0V, IS = 18A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
