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CEU10P10 参数 Datasheet PDF下载

CEU10P10图片预览
型号: CEU10P10
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 386 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEU10P10的Datasheet PDF文件第1页浏览型号CEU10P10的Datasheet PDF文件第2页浏览型号CEU10P10的Datasheet PDF文件第4页  
CED10P10/CEU10P10  
10  
8
15  
25 C  
-VGS=10,8,6,5V  
12  
6
9
-VGS=4V  
5
4
6
-55 C  
TJ=125 C  
3
2
0
-VGS=3V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)  
-VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
900  
750  
600  
450  
300  
150  
0
ID=-4A  
VGS=-10V  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
-100  
-50  
0
50  
100  
150  
200  
-VDS, Drain-to-Source Voltage (V)  
TJ, Junction Temperature( C)  
Figure 3. Capacitance  
Figure 4. On-Resistance Variation  
with Temperature  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VDS=VGS  
V
GS=0V  
ID=-250µA  
101  
100  
10-1  
-50 -25  
0
25 50 75 100 125 150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
TJ, Junction Temperature( C)  
-VSD, Body Diode Forward Voltage (V)  
Figure 5. Gate Threshold Variation  
with Temperature  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
3