CED04N7G/CEU04N7G
6
5
4
3
12
VGS=10,8,7V
10
8
V
GS=5V
6
4
2
V
GS=4V
25 C
1
0
2
0
TJ=125C
-55 C
5
1
2
3
4
6
0.0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.7
1.5
1.3
1.1
0.9
0.7
0.5
1200
1000
800
600
400
200
0
ID=1.8A
VGS=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.7
1.0
1.3
1.7
2.0
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3