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CEU02N6G 参数 Datasheet PDF下载

CEU02N6G图片预览
型号: CEU02N6G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 419 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CED02N6G/CEU02N6G  
Electrical Characteristics T = 25 C unless otherwise noted  
c
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 600V, VGS = 0V  
VGS = 30V, VDS = 0V  
VGS = -30V, VDS = 0V  
600  
V
25  
µA  
nA  
nA  
IGSSF  
IGSSR  
100  
-100  
Gate Threshold Voltage  
Static Drain-Source  
VGS(th)  
RDS(on)  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 1A  
2
4
5
V
3.8  
On-Resistance  
Dynamic Characteristics c  
Input Capacitance  
Ciss  
Coss  
Crss  
295  
75  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
20  
td(on)  
tr  
td(off)  
tf  
19  
11  
29  
10  
6.7  
1.5  
3
ns  
ns  
38  
22  
VDD = 300V, ID = 1A,  
VGS = 10V, RGEN = 18  
Turn-On Rise Time  
Turn-Off Delay Time  
ns  
58  
20  
8.9  
Turn-Off Fall Time  
ns  
Total Gate Charge  
Qg  
nC  
nC  
nC  
VDS = 480V, ID = 1A,  
VGS = 10V  
Gate-Source Charge  
Qgs  
Qgd  
Gate-Drain Charge  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
IS  
1.9  
1.5  
A
V
VSD  
VGS = 0V, IS = 1A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Device Mounted on FR4 Board, t < 10 sec.  
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
d.Guaranteed by design, not subject to production testing.  
e.L = 10mH, I  
=1.5A, V  
= 50V, R = 25W, Starting T = 25 C  
DD G J  
AS  
2