CED02N6G/CEU02N6G
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
5
V
3.8
Ω
On-Resistance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
295
75
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
20
td(on)
tr
td(off)
tf
19
11
29
10
6.7
1.5
3
ns
ns
38
22
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 18Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
58
20
8.9
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 480V, ID = 1A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
1.9
1.5
A
V
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, I
=1.5A, V
= 50V, R = 25W, Starting T = 25 C
DD G J
AS
2
CET [ CHINO-EXCEL TECHNOLOGY ]
