CES2331
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-20
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.4
VGS = -4.5V, ID = -3.3A
VGS = -2.5V, ID = -2.8A
VGS = -1.8V, ID = -2A
-1
48
60
78
V
36
46
60
mΩ
mΩ
mΩ
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
965
200
155
pF
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
15
10
40
13
13
2.5
3
30
20
80
26
17
ns
ns
VDD = -10V, ID = -4A,
VGS = -4.5V, RGEN = 3Ω
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = -10V, ID = -4A,
VGS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-4.2
-1.2
A
V
VSD
VGS = 0V, IS = -1.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
