CES2309
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-20
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.5
VGS = -4.5V, ID = -2.2A
-1.5
165
300
V
135
230
mΩ
mΩ
7
On-Resistance
VGS = -2.5V, ID = -2.0A
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = -5V, ID = -2.2A
3
S
275
105
70
pF
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
pF
pF
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
10
4
20
10
40
10
10
ns
ns
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
19
5
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
6.2
0.5
0.8
nC
nC
nC
VDS = -6V, ID = -2.2A,
VGS = -4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-2.2
-1.2
A
V
VSD
VGS = 0V, IS = -2.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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CET [ CHINO-EXCEL TECHNOLOGY ]
