CES2308
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
µA
µA
IGSSF
IGSSR
10
-10
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5.4A
VGS = 2.5V, ID = 4.3A
0.5
1.2
27
36
V
21
27
mΩ
mΩ
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Switching Characteristics d
Turn-On Delay Time
gFS
VDS = 10V, ID = 5.4A
17
S
td(on)
tr
td(off)
tf
0.35
0.87
3.60
2.01
4.3
0.7
1.8
7.5
4.3
7.5
µs
µs
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
µs
Turn-Off Fall Time
µs
Total Gate Charge
Qg
nC
nC
nC
VDS = 10V, ID = 5.4A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
1.1
Gate-Drain Charge
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
5.4
1.2
A
V
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2