CEPF640/CEBF640
CEFF640
12
10
8
40
25 C
VGS=10,9,8,7V
30
-55 C
TJ=125 C
6
VGS
=
20
10
0
6V
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3
4
5
6
7
8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3000
2500
2000
1500
1000
500
ID=10A
VGS=10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
