CEP93A3/CEB93A3
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
uA
uA
IGSSF
IGSSR
10
-10
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 40A
1
3
3
6
V
Static Drain-Source
2.3
4
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 15A
27
4100
980
600
S
Input Capacitance
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
24
19
ns
ns
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
128
72
ns
ns
Total Gate Charge
Qg
60
nC
nC
nC
VDS = 15V, ID = 16A,
VGS = 5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
12
25
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
100
1.2
A
V
VSD
VGS = 0V, IS = 20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I =46A, V = 24V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
