CEP75N06/CEB75N06
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 58V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
2
4
V
Static Drain-Source
10
12
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 25V, ID = 50A
21
2850
680
30
S
Input Capacitance
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
24
5.5
48
11
ns
ns
VDD = 30V, ID = 50A,
VGS = 10V, RGEN = 3.6Ω
Turn-Off Delay Time
Turn-Off Fall Time
41
82
ns
12
24
ns
Total Gate Charge
Qg
49.9
14.9
18.3
66.3
nC
nC
nC
VDS = 48V, ID = 50A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Notes :
IS
75
A
V
VSD
VGS = 0V, IS = 50A
1.3
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, I = 50A, V = 24V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
2
CET [ CHINO-EXCEL TECHNOLOGY ]
