CEP730G/CEB730G
CEF730G
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 400V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
400
V
10
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
2
4
1
V
Ω
S
0.8
6
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 50V, ID = 5A
Ciss
Coss
Crss
590
105
20
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
15
7
30
14
60
10
18
ns
ns
VDD = 200V, ID = 3.5A,
VGS = 10V, RGEN =12Ω
Turn-On Rise Time
Turn-Off Delay Time
30
5
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
14
2.5
6
nC
nC
nC
VDS = 320V, ID =3.5A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
5.5
1.5
A
V
VSD
VGS = 0V, IS = 3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package I
= 5A .
S(max)
2
CET [ CHINO-EXCEL TECHNOLOGY ]
