CEP703AL/CEB703AL
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 10A
VDS = 10V, ID = 25A
1
3
V
mΩ
mΩ
S
14
22
30
17
30
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1340
270
82
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
18
4.4
83
16
10
3
23
13
ns
ns
VDD = 15V, ID = 25A,
VGS = 10V, RGEN = 24Ω
Turn-On Rise Time
Turn-Off Delay Time
120
30
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 24V, ID = 25A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
4
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
40
A
V
VSD
VGS = 0V, IS = 25A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
