CEP65A3/CEB65A3
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 25V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
25
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 24A
1
2.5
12
18
V
9
mΩ
mΩ
On-Resistance
14
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
pF
pF
pF
921
209
108
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
20
6
40
10
ns
ns
VDD = 15V, ID = 35A,
VGS = 4.5V, RGEN = 16Ω
Turn-On Rise Time
Turn-Off Delay Time
50
100
35
ns
Turn-Off Fall Time
18
ns
Total Gate Charge
Qg
14.7
2.5
3.1
20
nC
nC
nC
VDS = 15V, ID =35A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
45
A
V
VSD
VGS = 0V, IS = 30A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
