CEP6186/CEB6186
60
50
40
30
24
20
VGS=10,8,7V
V
GS=4V
16
12
8
25 C
20
10
0
TJ=125C
2
4
0
V
GS=3V
-55 C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
3
4
5
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1200
ID=19A
VGS=10V
C
iss
1000
800
600
400
200
0
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3