CEP61A2/CEB61A2
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 25A
0.5
1.2
12
20
V
mΩ
mΩ
S
10
16.5
23
On-Resistance
VGS = 2.5V, ID = 25A
VDS = 10V, ID = 25A
Forwand Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
1600
810
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
195
td(on)
tr
td(off)
tf
15
14
39
21
22
4.2
9
25
23
63
34
28
ns
ns
VDD = 15V, ID = 25A,
VGS = 5V, RGEN = 5.6Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-On Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 15V, ID = 50A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
57
A
V
VSD
VGS = 0V, IS = 25A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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CET [ CHINO-EXCEL TECHNOLOGY ]
