CEP41A2/CEB41A2
30
30
25
20
15
10
5
VGS=4.5,3.5,3.0,2.5V
25 C
24
18
12
VGS=2.0V
TJ=125 C
-55 C
6
0
0
0
1
2
3
0
1
2
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1800
1500
1200
900
600
300
0
ID=20A
VGS=4.5V
C
iss
C
oss
C
rss
0
2
4
6
8
10
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 84
CET [ CHINO-EXCEL TECHNOLOGY ]
