CEP20N06/CEB20N06
25
20
15
10
50
40
30
20
VGS=10,8,6,5V
VGS=4.0
V
25 C
5
0
10
TJ=125 C
1.5
-55 C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3
4.5
6
7.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=14A
VGS=10V
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
