CEP20P06/CEB20P06
15
12
9
20
16
12
8
-VGS=10,9,8,7,6,5V
6
-VGS=4V
-VGS=3V
25 C
3
4
-55 C
TJ=125 C
2.5
0
0
0.0
0.5
1.0
1.5
2.0
2.0
3.0
3.5
4.0
4.5
5.0
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1200
ID=-9A
VGS=-10V
1000
800
600
400
200
0
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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