CEP13N10L/CEB13N10L
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 5 V, ID = 5A
VDS = 10V, ID = 6A
1
3
V
mΩ
175
185
140
150
5
mΩ
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
S
Ciss
Coss
Crss
450
90
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
25
td(on)
tr
td(off)
tf
8
4
16
8
ns
ns
VDD = 80, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-On Rise Time
Turn-Off Delay Time
30
3
60
6
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
12
1.3
3
24
nC
nC
nC
VDS = 80V, ID = 11A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
12.8
1.5
A
V
VSD
VGS = 0V, IS = 12.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
