CEP13N07/CEB13N07
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
70
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.5A
VGS = 5V, ID = 5.5A
VDS = 25V, ID = 5.5A
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
1
2.5
125
150
V
97
120
5
mΩ
mΩ
S
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
413
105
23
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
14
10
28
9
30
25
55
20
6.4
ns
ns
VDD = 30V, ID = 6.8A,
VGS = 5V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
5.5
2.1
2.3
nC
nC
nC
VDS = 48V, ID = 13.6A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
11
A
V
VSD
VGS = 0V, IS = 11A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 870mH, I = 11A, V = 25V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
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