CEP12N6/CEB12N6
CEF12N6
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS =600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 25V, ID =6A
2
4
V
Ω
S
0.53
10
0.65
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
2000
220
11
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
39
58
78
116
298
80
ns
ns
VDD = 300V, ID =12A,
VGS = 10V, RGEN = 25Ω
Turn-Off Delay Time
Turn-Off Fall Time
149
40
ns
ns
Total Gate Charge
Qg
51
66
nC
nC
nC
VDS = 400V,ID = 12A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
11
19
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
12
A
V
g
VSD
VGS = 0V, IS = 12A
1.4
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package I
=6A .
S(max)
g.Full package V test condition I =6A .
SD
S
2
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