CEP10N6/CEB10N6
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
44
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pulse Drain-Source
Avalanche Energy
V
DD =50V, L=11.8mH
mJ
A
E
AS
500
10
R =25
G
Ω
Maximum Drain-Source
Avalanche Current
I
AS
OFF CHARACTERISTICS
V
GS = 0V,I
D
= 250µA
Drain-Source Breakdown Voltage
600
V
BVDSS
µA
100
I
DSS
GSS
V
DS = 600V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
30V, VDS = 0V
Ć
I
nA
100
Ć
ON CHARACTERISTICSa
VGS(th)
2
4
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
R
DS(ON)
0.75
9
Ω
Drain-Source On-State Resistance
1.0
V
GS =10V, I
D
= 5A
10
VGS = 10V, VDS = 10V
On-State Drain Current
I
D(ON)
A
S
gFS
Forward Transconductance
VDS = 40V, I
D
= 5A
SWITCHING CHARACTERISTICSb
70
Turn-On Delay Time
35
90
t
D(ON)
ns
ns
V
DD =300V,
= 10A,
I
V
D
170
Rise Time
t
r
GS = 10V
Turn-Off Delay Time
Fall Time
t
D(OFF)
170
120
55
255
180
70
ns
ns
nC
R
GEN=25
Ω
t
f
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =480V, I
D
= 10A,
Q
gs
gd
9
nC
nC
VGS =10V
Q
22
4-173
CET [ CHINO-EXCEL TECHNOLOGY ]
