CEP01N6/CEB01N6
CEI01N6/CEF01N6
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
1
µA
µA
µA
IGSSF
IGSSR
10
-10
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.4A
2
4
V
12
15
Ω
On-Resistance
Dynamic Characteristics c
Forwand Transconductance
Input Capacitance
b
gFS
VDS = 20V, ID = 0.4A
0.5
136
46
S
Ciss
Coss
Crss
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
19
td(on)
tr
td(off)
tf
19
13
24
35
6
38
26
48
70
8
ns
ns
VDD = 300V, ID = 0.4A,
VGS = 10V, RGEN = 4.7Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-On Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 480V, ID = 0.8A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
1.0
4.4
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
0.8
1.6
A
V
VSD
VGS = 0V, IS = 0.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 190mH, I = 0.8A, V = 50V, R = 25Ω, Starting T = 25 C .
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
2
CET [ CHINO-EXCEL TECHNOLOGY ]
