CEM6607
15
12
9
10
8
-VGS=10,8,6,4V
6
6
4
-VGS=3V
25 C
2
3
0
TJ=125 C
-55 C
4
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
5
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=-3.8A
VGS=-10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
30
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
102
101
V
GS=0V
VDS=VGS
ID=-250µA
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
