CEM4948
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-60
V
-2
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.1A
VGS = -4.5V, ID = -2.8A
VDS = -15V, ID = -3.1A
-1
-3
V
mΩ
mΩ
S
90
120
7
120
150
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
780
170
49
pF
pF
pF
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
13
9
45
30
ns
ns
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
48
22
21
3
150
75
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
29
nC
nC
nC
VDS = -30V, ID = -3.1A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
4
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-2.0
-1.2
A
V
VSD
VGS = 0V, IS = -2.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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CET [ CHINO-EXCEL TECHNOLOGY ]
