CEM4808
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 10A
1
3
V
mΩ
mΩ
S
12
15
20
15
20
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
2115
405
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
255
td(on)
tr
td(off)
tf
15
10
45
16
20
6.5
6
30
20
ns
ns
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
90
ns
Turn-Off Fall Time
32
ns
Total Gate Charge
Qg
26.6
nC
nC
nC
VDS = 15V, ID = 12A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
4.5
1.0
A
V
VSD
VGS = 0V, IS = 4.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
