CEM4481
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-40
V
5
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.6A
VGS = -4.5V, ID = -3.7A
-1
-3
66
V
55
85
mΩ
mΩ
On-Resistance
105
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
VDS = -5V, ID = -4.6A
7
S
Ciss
Coss
Crss
700
120
70
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
12
2
25
4
ns
ns
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
30
4
60
8
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
5.3
1.9
2.1
7
nC
nC
nC
VDS = -20V, ID = -4.2A,
VGS = -4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-4.6
-1.2
A
V
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
